Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing

被引：6

作者：

Chen, W. B. ^{[1
]}

Wu, C. H. ^{[2
]}

Shie, B. S. ^{[1
]}

Chin, Albert ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Chung Hua Univ, Dept Elect Engn, Hsinchu 30012, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期

关键词：

Ge; high-kappa gate dielectric; laser annealing; GERMANIUM; SOURCE/DRAIN; ENHANCEMENT; PERFORMANCE;

D O I：

10.1109/LED.2010.2063692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward\reverse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness.

引用

页码：1184 / 1186

页数：3

共 20 条

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