Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

被引：0
作者：
Luo, XD [1 ]
Xu, ZY
Pan, Z
Li, LH
Lin, YW
Ge, WK
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Opto Elect, Beijing 100083, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2001年 / 20卷 / 01期
关键词：
GaNAs; band offset; PL;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The optical properties and the band lineup in GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) technique were investigated. It was found that the low-temperature PL is dominated by the intrinsic localized exciton emission. By fitting the experimental datawith a simple calculation, band offset of the GaN0.015As0.985/GaAs heterostructure was estimated. Moreover, DeltaE(c), the discontinuity of the conduction band was found to be a nonlinear function of the nitrogen composition (chi) and the average variation of DeltaE(c) is about 0. 110eV per % N, such smaller than that reported on the literature to (0.156 similar to 0.175 eV/N %). In addition, Qc has little change whtn N composition increares, with an experimential relation of QC approximate tox(0.25). The band bowing coefficient (b) was also studied in this paper. The measured band bowing coefficient shows a strong function of chi, giving an experimental support to the theoretic calculation of Wei Su-Huai and Zunger Alex (1996).
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页码：25 / 29
页数：5
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