Progress in cold-wall epitaxy for 4H-SiC high-power devices

被引：2

作者：

Rowland, L. B. ^{[1
]}

Dunne, G. T. ^{[1
]}

Fronheiser, J. ^{[1
]}

Soloviev, S. ^{[1
]}

机构：

[1] GE Global Res, Niskayuna, NY 12309 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

epitaxial growth; uniformity; diffusion length; electron beam induced current;

D O I：

10.4028/www.scientific.net/MSF.556-557.141

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cold-wall vapor phase epitaxy was utilized to grow uniform 4H-SiC layers with abrupt doping interfaces on 4 degrees off-axis substrates. Concentrations of Al were reduced roughly 200x after 0.1 mu m of epitaxy after trimethyfaluminum flow was stopped. Thickness uniformity of cold-wall epitaxy across 3" wafers was as good as 3.2%. Minority carrier diffusion lengths of 27 mu m-thick 4H-SiC epitaxy grown in a cold-wall design were as high as 58 mu m.

引用

页码：141 / +

页数：2

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