16.0% efficiency of large area (10 cm x 10 cm) thin film polycrystalline silicon solar cell

被引：27

作者：

Morikawa, H ^{[1
]}

Nishimoto, Y ^{[1
]}

Naomoto, H ^{[1
]}

Kawama, Y ^{[1
]}

Takami, A ^{[1
]}

Arimoto, S ^{[1
]}

Ishihara, T ^{[1
]}

Namba, K ^{[1
]}

机构：

[1] Mitsubishi Elect Co, Nakatsugawa Works, Photovolt Devices Technol Ctr, Itami, Hyogo 664, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 53卷 / 1-2期

关键词：

Si solar cells; thin films; conversion efficiency;

D O I：

10.1016/S0927-0248(98)00003-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High efficient large area thin film polycrystalline Si solar cell based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. Fabrication process of the via-hole etching for the separation of thin films (VEST) is newly developed. It is found that phosphorus treatment and back surface field (BSF) are quite effective for the VEST structure and the ZMR thin film polycrystalline silicon. The conversion efficiency as high as 16.0% for a practical size (10 cm x 10 cm) is achieved. This is the highest for large area thin film polycrystalline Si solar cells ever reported. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：23 / 28

页数：6