Tc suppression and resistivity in cuprates with out of plane defects

被引:23
作者
Graser, S. [1 ]
Hirschfeld, P. J.
Zhu, L.-Y.
Dahm, T.
机构
[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[2] Univ Tubingen, Inst Theoret Phys, D-72026 Tubingen, Germany
[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
关键词
D O I
10.1103/PhysRevB.76.054516
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent experiments introducing controlled disorder into optimally doped cuprate superconductors by both electron irradiation and chemical substitution have found unusual behavior in the rate of suppression of the critical temperature T-c vs increase in residual resistivity. We show here that the unexpected discovery that the rate of T-c suppression vs resistivity is stronger for out of plane than for in plane impurities may be explained by consistent calculation of both T-c and resistivity if the potential scattering is assumed to be nearly forward in nature. For realistic models of impurity potentials, we further show that significant deviations from the universal Abrikosov-Gor'kov T-c suppression behavior may be expected for out of plane impurities.
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页数:6
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