Diffusion of Si adatoms on H-terminated Si(001) surfaces

被引：0

作者：

Ohno, T ^{[1
]}

Nara, J ^{[1
]}

Sasaki, T ^{[1
]}

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan

来源：

MICROSCOPIC SIMULATION OF INTERFACIAL PHENOMENA IN SOLIDS AND LIQUIDS | 1998年 / 492卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated adsorption and diffusion processes of a Si atom on hydrogen-terminated Si(001)-(2x1) surfaces using first-principles total-energy calculations. The Si adatom segregates H atoms from surface Si dimer atoms on the monohydride terminated Si(001) surface. The migration of the Si adatom is assisted by the mobility of H atoms, that is, the Si adatom migrates on the surface by repeating release and capture of H atoms. The effects of a single H-terminated Si dimer on the Si migration are also examined. Calculated results are in good agreements with the variation in morphology of Si homoepitaxial films induced by hydrogen termination.

引用

页码：275 / 280

页数：6