A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates

被引:37
作者
Eickhoff, M
Möller, H
Kroetz, G
Berg, JV
Ziermann, R
机构
[1] Daimler Benz AG, Res & Technol, Dept FT2 M, D-81660 Munich, Germany
[2] Tech Univ Berlin, Microsensor & Actuator Technol Ctr, Berlin, Germany
关键词
high temperature pressure sensor; SiC; selective deposition of SiC; SOI substrates;
D O I
10.1016/S0924-4247(98)00302-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high temperature pressure sensor with 3C-SiC piezoresistors as sensing elements was prepared. For the first time the sensing elements were structured by selective deposition of 3C-SiC on a patterned Si/SiO, surface. To ensure dielectric isolation SOI substrates were used. The effectiveness of the selective deposition process is demonstrated by REM-photographs. Characterisation of the sensing elements shows the good crystal quality of the sensing elements as indicated by the gauge factor of -18 at room temperature which decreases to -10 at 200 degrees C. As a benefit of the deep dry etching process the related sensitivity is 3.5 mV/V bar at room temperature decreasing to 2.1 mV/V bar at 200 degrees C for a 100-mu m thick circular center boss diaphragm. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:56 / 59
页数:4
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