Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire

被引：7

作者：

Gonzalez-Zalba, M. F. ^{[1
]}

Heiss, D. ^{[1
]}

Podd, G. ^{[2
]}

Ferguson, A. J. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTOR; ROOM-TEMPERATURE; CHARGE SENSITIVITY; ATOM;

D O I：

10.1063/1.4750251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and electrical characterization of an electrostatically defined aluminum-gated SET on a lightly doped SOI etched nanowire based on MOSFET structures. The tunability of the device is achieved via two sets of electrically isolated aluminum surface gates. The results demonstrate a reproducible constant charging energy of 2meV for a large range of gate voltages as well as tunable tunneling resistance. The controllable tunnel barriers permit transport spectroscopy of subthreshhold features. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750251]

引用

页数：4

共 26 条

[1] Radio-frequency single-electron transistor as readout device for qubits: Charge sensitivity and backaction [J].

Aassime, A ;

Johansson, G ;

Wendin, G ;

Schoelkopf, RJ ;

Delsing, P .

PHYSICAL REVIEW LETTERS, 2001, 86 (15) :3376-3379

[2] A silicon radio-frequency single electron transistor [J].

Angus, S. J. ;

Ferguson, A. J. ;

Dzurak, A. S. ;

Clark, R. G. .

APPLIED PHYSICS LETTERS, 2008, 92 (11)

[3]

Angus S. J., 2007, THESIS U S WALES

[4] Deep oxidation of aluminum by a DC oxygen plasma [J].

Baier-Saip, JA ;

Avila, JI ;

Tarrach, G ;

Cabrera, AL ;

Fuenzalida, V ;

Zarate, RA ;

Schuller, IK .

SURFACE & COATINGS TECHNOLOGY, 2005, 195 (2-3) :168-175

[5] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[6] EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

REBER, RA ;

MEISENHEIMER, TL ;

SCHWANK, JR ;

SHANEYFELT, MR ;

RIEWE, LC .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :5058-5074

[7] Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor [J].

Fujiwara, A ;

Inokawa, H ;

Yamazaki, K ;

Namatsu, H ;

Takahashi, Y ;

Zimmerman, NM ;

Martin, SB .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

[8] A hybrid double-dot in silicon [J].

Gonzalez-Zalba, M. Fernando ;

Heiss, Dominik ;

Ferguson, Andrew J. .

NEW JOURNAL OF PHYSICS, 2012, 14

[9] CHARGE SENSITIVITY OF A SINGLE-ELECTRON TRANSISTOR [J].

HANKE, U ;

GALPERIN, YM ;

CHAO, KA .

APPLIED PHYSICS LETTERS, 1994, 65 (14) :1847-1849

[10]

Haynes W., 2012, CRC Handbook of Chemistry and Physics

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