Oxygen precipitation in neutron-irradiated Czochralski silicon annealed at elevated temperature

被引：8

作者：

Cui, C ^{[1
]}

Yang, DR ^{[1
]}

Ma, XY ^{[1
]}

Fan, RX ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 13期

关键词：

D O I：

10.1002/pssa.200521141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of vacancies introduced by neutron-irradiation on oxygen precipitation at elevated temperatures in Czochralski (CZ) silicon have been investigated. In comparison with noirradiated CZ silicon, the neutron-irradiated CZ silicon exhibits stronger oxygen precipitation at 1050 degrees C or 1150 degrees C due to the existence of supersaturated vacancies in the bulk. Moreover, it is proved that the oxygen out-diffusion at high temperature is not enhanced by the supersaturated vacancies induced by neutron-irradiation. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2442 / 2447

页数：6

共 23 条

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[2] Effect of nitrogen on denuded zone in Czochralski silicon wafer [J].

Cui, C ;

Yang, DR ;

Yu, XG ;

Ma, XY ;

Li, LB ;

Que, DL .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) :548-551

[3]

Falster R, 2000, PHYS STATUS SOLIDI B, V222, P219, DOI 10.1002/1521-3951(200011)222:1<219::AID-PSSB219>3.0.CO

[4]

2-U

[5] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :53-55

[6] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[7] Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal [J].

Liu, PD ;

Ma, XU ;

Zhang, JX ;

Li, LB ;

Que, DL .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) :3669-3673

[8] EFFECT OF OXYGEN CONCENTRATION ON THE KINETICS OF THERMAL DONOR FORMATION IN SILICON AT TEMPERATURES BETWEEN 350 DEGREES-C AND 500-DEGREES-C [J].

LONDOS, CA ;

BINNS, MJ ;

BROWN, AR ;

MCQUAID, SA ;

NEWMAN, RC .

APPLIED PHYSICS LETTERS, 1993, 62 (13) :1525-1526

[9] Effect of rapid thermal processing on high temperature oxygen precipitation behaviour in Czochralski silicon wafer [J].

Ma, XY ;

Lin, L ;

Tian, DX ;

Fu, LM ;

Yang, DR .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (21) :3563-3569

[10] Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers [J].

Ma, XY ;

Yu, XG ;

Fan, RX ;

Yang, DR .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :496-498

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