Passivation integrity investigations for through wafer interconnects

被引：11

作者：

Kraft, J.

Hueber, A.

Carniello, S.

Schrank, F.

Wachmann, E.

机构：

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

D O I：

10.1109/RELPHY.2008.4558937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through wafer interconnects (TWI) with diameters greater than 50 mu m have the advantage of extremely low contact resistances. The mechanics of the layers inside the TWI has to be well understood in order to avoid passivation cracks. Results of simulation and mechanical investigations are discussed in this paper.

引用

页码：506 / 509

页数：4