Synthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealing

被引:8
作者
Lin, CJ [1 ]
Lin, GR
Chueh, YL
Chou, LJ
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electopt Engn, Hsinchu 300, Taiwan
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
D O I
10.1149/1.2109327
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Localized synthesis of 4.2-5.6 nm Si nanocrystals (nc-Si) in plasma enhanced chemical vapor deposition-grown Si-rich SiOx (x = 1.25) (SRSO) layer is demonstrated using a CO2 laser annealing at intensity of 6.0 kW/cm(2). At an optimized surface temperature of 1285 C, the precipitated nc-Si in annealed SRSO results in near-infrared photoluminescence at 806 nm. The refractive index of the laser-annealed SRSO at 633 nm increases from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm(2). Transmission electron microscopy analysis reveals that the average size and volume density of nc-Si embedded in the SRSO layer are about 5.2 nm and 1.08 x 10(18) cm(-3). (c) 2005 The Electrochemical Society.
引用
收藏
页码:D43 / D45
页数:3
相关论文
共 16 条
[1]   Optical properties of Ir2+-implanted silica glass [J].
Cheang-Wong, JC ;
Oliver, A ;
Roiz, J ;
Hernández, JM ;
Rodríguez-Fernández, L ;
Morales, JG ;
Crespo-Sosa, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 :490-494
[2]  
FOWLES GR, 1975, INTRO MODERN OPTICS, P119
[3]   Laser annealing of SiOx thin films [J].
Gallas, B ;
Kao, CC ;
Fisson, S ;
Vuye, G ;
Rivory, J ;
Bernard, Y ;
Belouet, C .
APPLIED SURFACE SCIENCE, 2002, 185 (3-4) :317-320
[4]   Luminescence properties of Si nanocrystals embedded in optical microcavities [J].
Iacona, F ;
Franzò, G ;
Moreira, EC ;
Pacifici, D ;
Irrera, A ;
Priolo, F .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2) :377-381
[5]   Light-induced modification of a-SiOx II:: Laser crystallization [J].
Janotta, A ;
Dikce, Y ;
Schmidt, M ;
Eisele, C ;
Stutzmann, M ;
Luysberg, M ;
Houben, L .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) :4060-4068
[6]   Systematic correlation between Raman spectra, photoluminescence intensity, and absorption coefficient of silica layers containing Si nanocrystals [J].
Khriachtchev, L ;
Räsänen, M ;
Novikov, S ;
Pavesi, L .
APPLIED PHYSICS LETTERS, 2004, 85 (09) :1511-1513
[7]   Defect-enhanced photoconductive response of silicon-implanted borosilicate glass [J].
Lin, GR ;
Lin, CJ ;
Lin, CK .
APPLIED PHYSICS LETTERS, 2004, 85 (06) :935-937
[8]   Optical study of Si nanocrystals in Si/SiO2 layers by spectroscopic ellipsometry [J].
Naciri, AE ;
Mansour, M ;
Johann, L ;
Grob, JJ ;
Eckert, C .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 :167-172
[9]   Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy [J].
Nishikawa, H ;
Stahlbush, RE ;
Stathis, JH .
PHYSICAL REVIEW B, 1999, 60 (23) :15910-15918
[10]  
PALIK ED, 1985, HDB OPTICAL CONSTANT, P762