Resonant pairing of excitons in semiconductor heterostructures

被引：13

作者：

Andreev, S. V. ^{[1
,2
,3
,4
]}

机构：

[1] CNRS, Lab Phys Theor & Modeles Stat, F-91405 Orsay, France

[2] Univ Paris 11, UMR8626, F-91405 Orsay, France

[3] ITMO Univ, St Petersburg 197101, Russia

[4] Univ Bordeaux, LOMA, UMR CNRS 5798, F-33405 Talence, France

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 14期

基金：

欧洲研究理事会;

关键词：

DER-WAALS HETEROSTRUCTURES; BOSE-EINSTEIN CONDENSATE; FESHBACH RESONANCES; SUPERFLUIDITY; DYNAMICS; STATES; ATOMS;

D O I：

10.1103/PhysRevB.94.140501

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a biexcitonic gapped state can be controlled in situ by tuning the electric field applied to the structure in the growth direction. The proposed playground should allow one to go to strongly correlated and high-temperature regimes, unattainable with Feshbach resonant atomic gases.

引用

页数：5

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