Wide-linear-range subthreshold OTA for low-power, low-voltage, and low-frequency applications

被引:44
作者
El Mourabit, A [1 ]
Lu, GN [1 ]
Pittet, P [1 ]
机构
[1] LENAC, F-69622 Villeurbanne, France
关键词
linearization; low G(m); low power; low supply; multiple input floating-gate (MIFG) MOS transistor; subthreshold operational transconductance amplifier (OTA);
D O I
10.1109/TCSI.2005.852011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a novel configuration of linearized subthreshold operational transcombictance amplifier (OTA) for lowpower, low-voltage, and low-frequency applications. By using multiple input floating-gate (MIFG) MOS devices and implementing a cubic-distortion-term-canceling technique, the linear range of the OTA is tip to 1.1 Vpp under a 1.5-V supply for less than 1% of transconductance variation, according to testing results from a circuit designed in a double-poly, 0.8-mu m, CMOS process. The power consumption of the OTA remains below 1 pW for biasing currents in the range between 1-200 nA. The offset voltage due to secondary effects (contributed by parasitic capacitances, errors and mismatches of parameters, charge entrapment, etc.) is of the order of a few ten millivolts, and can be canceled by adjusting biasing voltages of input MIFG MOS transistors.
引用
收藏
页码:1481 / 1488
页数:8
相关论文
共 19 条
[1]  
ARREGUIT X, 1989, THESIS EPFL LAUSANNE
[2]  
FURTH PM, 1995, ELECTRON LETT, V31, P547
[3]  
GOUVEIA OCF, ACM MODEL CIRCUIT SI
[4]  
GRAY PR, 2001, ANAL DESIGN ANAL INT
[5]  
HASLER P, 1997, THESIS CALTECH PASAD
[6]   Clock-controlled neuron-MOS logic gates [J].
Kotani, K ;
Shibata, T ;
Imai, M ;
Ohmi, T .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING, 1998, 45 (04) :518-522
[7]   SYSTEMATIC CAPACITANCE MATCHING ERRORS AND CORRECTIVE LAYOUT PROCEDURES [J].
MCNUTT, MJ ;
LEMARQUIS, S ;
DUNKLEY, JL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (05) :611-616
[8]  
MICHAEL C, 1994, IEEE J SOLID-ST CIRC, V27, P152
[9]  
MINCH BA, 1996, P 1996 IEEE INT S CI, V1, P239
[10]  
Pelgrom M. J. M., 1989, IEEE J SOLID STATE C, V24