A valley-filtering switch based on strained graphene

被引：33
作者：
Zhai, Feng [1 ,2 ]
Ma, Yanling [3 ,4 ]
Zhang, Ying-Tao [5 ]
机构：
[1] Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua 321004, Peoples R China
[2] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China
[3] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China
[4] Dalian Univ Technol, Coll Adv Sci & Technol, Dalian 116024, Peoples R China
[5] Hebei Normal Univ, Coll Phys, Shijiazhuang 050016, Peoples R China
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 38期
关键词：
2-DIMENSIONAL ELECTRON-GAS; TRANSPORT;
D O I：
10.1088/0953-8984/23/38/385302
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device.
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页数：5
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