Revealing the grain structure of graphene grown by chemical vapor deposition

被引:66
作者
Nemes-Incze, Peter [1 ,3 ]
Yoo, Kwon Jae [2 ,3 ]
Tapaszto, Levente [1 ,3 ]
Dobrik, Gergely [1 ,3 ]
Labar, Janos [1 ]
Horvath, Zsolt E. [1 ,3 ]
Hwang, Chanyong [2 ,3 ]
Biro, Laszlo Peter [1 ,3 ]
机构
[1] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[2] Korea Res Inst Stand & Sci, Div Ind Metrol, Ctr Adv Instrumentat, Taejon 305340, South Korea
[3] JKHLN, H-1525 Budapest, Hungary
关键词
FEW-LAYER GRAPHENE; LARGE-AREA; FILMS; OXIDATION; TRANSPORT;
D O I
10.1063/1.3610941
中图分类号
O59 [应用物理学];
学科分类号
摘要
The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron microscopy and diffraction methods and may be used to give quick feedback on the quality of graphene samples grown by chemical vapor deposition. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610941]
引用
收藏
页数:3
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