Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga2O3 nanowire array

Controllable deposition of Ga droplets on a GaN template is discussed in detail in the present work. It is found that the Ga droplet density shows apparent nonlinear dependence on the flux of triethylgallium under certain annealing conditions. A simplified model based on the weakening of cluster mobility is proposed to explain the phenomenon. In addition, based on the different mobility of Ga on different substrates, a SiO2 mask with ordered nanopore array is designed and optimized for controllable catalyst deposition. By further optimizing the deposition and annealing process, a higher filling rate of nanopores is obtained, and ordered beta-Ga2O3 nanowire arrays perpendicular to substrates are then achieved. The controllable uniform vertical nanowire array would further promote optimization of nanowire growth and device fabrication.