Negative luminescence from mid-wave infrared HgCdTe diode arrays

被引：9
作者：
Lindle, JR
Bewley, WW
Vurgaftman, I
Meyer, JR
Johnson, JL
Thomas, ML
Tennant, WE
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期
关键词：
negative luminescence; IR photodiodes; HgCdTe; cold shielding;
D O I：
10.1016/j.physe.2003.09.009
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 mum as a function of sample temperature. The internal efficiency at a wavelength of 4 mum was 93% at 295 K, and nearly independent of temperature in the 240-300 K range. This corresponds to an apparent temperature reduction > 50 K at room temperature and > 30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm(2). The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：558 / 562
页数：5
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