Negative luminescence from mid-wave infrared HgCdTe diode arrays

被引:9
|
作者
Lindle, JR
Bewley, WW
Vurgaftman, I
Meyer, JR
Johnson, JL
Thomas, ML
Tennant, WE
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA
关键词
negative luminescence; IR photodiodes; HgCdTe; cold shielding;
D O I
10.1016/j.physe.2003.09.009
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 mum as a function of sample temperature. The internal efficiency at a wavelength of 4 mum was 93% at 295 K, and nearly independent of temperature in the 240-300 K range. This corresponds to an apparent temperature reduction > 50 K at room temperature and > 30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm(2). The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:558 / 562
页数:5
相关论文
共 49 条
  • [1] HOT mid-wave HgCdTe nBn and pBp infrared detectors
    Martyniuk, P.
    OPTICAL AND QUANTUM ELECTRONICS, 2015, 47 (06) : 1311 - 1318
  • [2] HOT mid-wave HgCdTe nBn and pBp infrared detectors
    P. Martyniuk
    Optical and Quantum Electronics, 2015, 47 : 1311 - 1318
  • [3] Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes
    Kerlain, A.
    Bonnouvrier, G.
    Rubaldo, L.
    Decaens, G.
    Reibel, Y.
    Abraham, P.
    Rothman, J.
    Mollard, L.
    De Borniol, E.
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (10) : 2943 - 2948
  • [4] Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes
    A. Kerlain
    G. Bonnouvrier
    L. Rubaldo
    G. Decaens
    Y. Reibel
    P. Abraham
    J. Rothman
    L. Mollard
    E. De Borniol
    Journal of Electronic Materials, 2012, 41 : 2943 - 2948
  • [5] The Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes at SITP
    Guo, Huijun
    Cheng, Yushun
    Chen, Lu
    Lin, Chun
    Li, Hao
    Chen, Honglei
    Ding, Ruijun
    He, Li
    14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019), 2019, 11170
  • [6] Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range
    P. Martyniuk
    W. Gawron
    A. Rogalski
    Journal of Electronic Materials, 2013, 42 : 3309 - 3319
  • [7] Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range
    Martyniuk, P.
    Gawron, W.
    Rogalski, A.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3309 - 3319
  • [8] MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates
    Lei, W.
    Gu, R. J.
    Antoszewski, J.
    Dell, J.
    Neusser, G.
    Sieger, M.
    Mizaikoff, B.
    Faraone, L.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (09) : 3180 - 3187
  • [9] MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates
    W. Lei
    R. J. Gu
    J. Antoszewski
    J. Dell
    G. Neusser
    M. Sieger
    B. Mizaikoff
    L. Faraone
    Journal of Electronic Materials, 2015, 44 : 3180 - 3187
  • [10] High-performance Graphene-enhanced HgCdTe Mid-wave Infrared Photodetector Development
    Zeller, John W.
    Sood, Ashok K.
    Ghuman, Parminder
    Babu, Sachidananda
    Dhar, Nibir K.
    Ganguly, Samiran
    Jacobs, Randy N.
    Chaudhary, Latika S.
    Efstathiadis, Harry
    INFRARED SENSORS, DEVICES, AND APPLICATIONS XII, 2022, 12234