Picosecond pulse generation from passively modelocked vertical cavity diode laser at up to 15 GHz pulse repetition rate

被引：37

作者：

Jasim, K ^{[1
]}

Zhang, Q

Nurmikko, AV

Ippen, E

Mooradian, A

Carey, G

Ha, W

机构：

[1] Brown Univ, Div Engn, Dept Phys, Providence, RI 02912 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[3] Novalux Inc, Sunnyvale, CA 94086 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 01期

关键词：

D O I：

10.1049/el:20040024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The generation of ultrashort pulses (similar to 15 ps) from a passively mode-locked InGaAs multiple quantum well (MQW) vertical cavity surface emitting diode laser is reported at a repetition rate up to 15 GHz, utilising a cavity configuration that incorporates a reverse-biased quantum well device as a fast saturable absorber. Pulsing at up to 20 GHz rate has been observed on a continuous-wave background.

引用

页码：34 / 36

页数：3

共 8 条

[1] Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications [J].

Avrutin, EA ;

Marsh, JH ;

Portnoi, EL .

IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (04) :251-278

[2] Picosecond pulse generation with 1.5 μm passively modelocked surface-emitting semiconductor laser [J].

Hoogland, S ;

Garnache, A ;

Sagnes, I ;

Paldus, B ;

Weingarten, KJ ;

Grange, R ;

Haiml, M ;

Paschotta, R ;

Keller, U ;

Tropper, AC .

ELECTRONICS LETTERS, 2003, 39 (11) :846-847

[3]

HOOGLAND S, 2003, CLEO 2003 BALT MD US

[4] Passively modelocked vertical extended cavity surface emitting diode laser [J].

Jasim, K ;

Zhang, Q ;

Nurmikko, AV ;

Mooradian, A ;

Carey, G ;

Ha, W ;

Ippen, E .

ELECTRONICS LETTERS, 2003, 39 (04) :373-375

[5] High-frequency modulation of oxide-confined vertical cavity surface emitting lasers [J].

Lear, KL ;

Mar, A ;

Choquette, KD ;

Kilcoyne, SP ;

Schneider, RP ;

Geib, KM .

ELECTRONICS LETTERS, 1996, 32 (05) :457-458

[6] High-power surface emitting semiconductor laser with extended vertical compound cavity [J].

McInerney, JG ;

Mooradian, A ;

Lewis, A ;

Shchegrov, A ;

Strzelecka, EM ;

Lee, D ;

Watson, JP ;

Liebman, A ;

Carey, GP ;

Cantos, BD ;

Hitchens, WR ;

Heald, D .

ELECTRONICS LETTERS, 2003, 39 (06) :523-525

[7] Limits of the modulation response of a single-mode proton implanted VCSEL [J].

Satuby, Y ;

Orenstein, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (06) :760-762

[8]

ZHANG Q, 2003, IN PRESS IEEE PHOTON

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