Inverse Funnel Effect of Excitons in Strained Black Phosphorus

被引:69
作者
San-Jose, Pablo [1 ]
Parente, Vincenzo [1 ,2 ]
Guinea, Francisco [2 ,3 ]
Roldan, Rafael [1 ]
Prada, Elsa [4 ,5 ]
机构
[1] CSIC, ICMM, E-28049 Madrid, Spain
[2] IMDEA Nanociencia, E-28049 Madrid, Spain
[3] Univ Manchester, Sch Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England
[4] Univ Autonoma Madrid, Dept Fis Mat Condensada, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain
[5] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
基金
欧洲研究理事会;
关键词
MONOLAYER MOS2; BAND-GAP; TRANSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR; GRAPHENE;
D O I
10.1103/PhysRevX.6.031046
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the effects of strain on the properties and dynamics of Wannier excitons in monolayer (phosphorene) and few-layer black phosphorus (BP), a promising two-dimensional material for optoelectronic applications due to its high mobility, mechanical strength, and strain-tunable direct band gap. We compare the results to the case of molybdenum disulphide (MoS2) monolayers. We find that the so-called funnel effect, i.e., the possibility of controlling exciton motion by means of inhomogeneous strains, is much stronger in few-layer BP than in MoS2 monolayers and, crucially, is of opposite sign. Instead of excitons accumulating isotropically around regions of high tensile strain like in MoS2, excitons in BP are pushed away from said regions. This inverse funnel effect is moreover highly anisotropic, with much larger funnel distances along the armchair crystallographic direction, leading to a directional focusing of exciton flow. A strong inverse funnel effect could enable simpler designs of funnel solar cells and offer new possibilities for the manipulation and harvesting of light.
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页数:12
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共 77 条
[1]   Strain solitons and topological defects in bilayer graphene [J].
Alden, Jonathan S. ;
Tsen, Adam W. ;
Huang, Pinshane Y. ;
Hovden, Robert ;
Brown, Lola ;
Park, Jiwoong ;
Muller, David A. ;
McEuen, Paul L. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2013, 110 (28) :11256-11260
[2]   Near-unity photoluminescence quantum yield in MoS2 [J].
Amani, Matin ;
Lien, Der-Hsien ;
Kiriya, Daisuke ;
Xiao, Jun ;
Azcatl, Angelica ;
Noh, Jiyoung ;
Madhvapathy, Surabhi R. ;
Addou, Rafik ;
Santosh, K. C. ;
Dubey, Madan ;
Cho, Kyeongjae ;
Wallace, Robert M. ;
Lee, Si-Chen ;
He, Jr-Hau ;
Ager, Joel W., III ;
Zhang, Xiang ;
Yablonovitch, Eli ;
Javey, Ali .
SCIENCE, 2015, 350 (6264) :1065-1068
[3]  
[Anonymous], 1984, COURSE THEORETICAL P
[4]   Effect of van der Waals interactions on the structural and elastic properties of black phosphorus [J].
Appalakondaiah, S. ;
Vaitheeswaran, G. ;
Lebegue, S. ;
Christensen, N. E. ;
Svane, A. .
PHYSICAL REVIEW B, 2012, 86 (03)
[5]  
BAGAEV VS, 1969, JETP LETT-USSR, V10, P195
[6]   Photocurrent generation with two-dimensional van der Waals semiconductors [J].
Buscema, Michele ;
Island, Joshua O. ;
Groenendijk, Dirk J. ;
Blanter, Sofya I. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
CHEMICAL SOCIETY REVIEWS, 2015, 44 (11) :3691-3718
[7]   Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating [J].
Buscema, Michele ;
Groenendijk, Dirk J. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NATURE COMMUNICATIONS, 2014, 5
[8]   Tuning of the electronic and optical properties of single-layer black phosphorus by strain [J].
Cakir, Deniz ;
Sahin, Hasan ;
Peeters, Francois M. .
PHYSICAL REVIEW B, 2014, 90 (20)
[9]   Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2 [J].
Cappelluti, E. ;
Roldan, R. ;
Silva-Guillen, J. A. ;
Ordejon, P. ;
Guinea, F. .
PHYSICAL REVIEW B, 2013, 88 (07)
[10]   Isolation and characterization of few-layer black phosphorus [J].
Castellanos-Gomez, Andres ;
Vicarelli, Leonardo ;
Prada, Elsa ;
Island, Joshua O. ;
Narasimha-Acharya, K. L. ;
Blanter, Sofya I. ;
Groenendijk, Dirk J. ;
Buscema, Michele ;
Steele, Gary A. ;
Alvarez, J. V. ;
Zandbergen, Henny W. ;
Palacios, J. J. ;
van der Zant, Herre S. J. .
2D MATERIALS, 2014, 1 (02)