The effect of dopants on the structure of SnO2 thin film

被引：0
|
作者：
Liu, W [1 ]
Cao, XP [1 ]
Zhu, YF [1 ]
Cao, LL [1 ]
机构：
[1] Tsing Hua Univ, Dept Chem, Beijing 100084, Peoples R China
来源：
TECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS | 1998年
关键词：
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
In this paper, the structure of SnO2 thin films doped with Pd, Sb, Pt and In, especially the effects of dopants on the electronic structure of SnO2 were studied by XPS and TEM. It was observed that the dopants not only changed the Fermi level but also influenced the distribution of electron state density(DESD)of Sn4d valence band. We also studied the electronic structure change of the doped-SnO2 after H-2 adsorption.
引用
收藏
页码：36 / 38
页数：3
相关论文
共 50 条
  • [1] The effect of dopants on the electronic structure of SnO2 thin film
    Liu, W
    Cao, XP
    Zhu, YF
    Cao, LL
    SENSORS AND ACTUATORS B-CHEMICAL, 2000, 66 (1-3) : 219 - 221
  • [2] Influences of dopants on the electronic structure of SnO2 thin films
    Cao, XP
    Cao, LL
    Yao, WQ
    Ye, XY
    THIN SOLID FILMS, 1998, 317 (1-2) : 443 - 445
  • [3] Effect of atmosphere and dopants on sintering of SnO2
    Varela, JA
    Perazolli, LA
    Longo, E
    Leite, ER
    Cerri, JA
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1998, 146 (1-4): : 131 - 143
  • [4] Effect of UV light irradiation in SnO2 thin film
    Takubo, Naoko
    Muraoka, Yuji
    Hiroi, Zenji
    LXIII YAMADA CONFERENCE ON PHOTO-INDUCED PHASE TRANSITION AND COOPERATIVE PHENOMENA (PIPT3), 2009, 148
  • [5] Effect of annealing ambient on SnO2 thin film transistors
    Priyadarshini, D. M.
    Mannam, Ramanjaneyulu
    Rao, M. S. Ramachandra
    DasGupta, Nandita
    APPLIED SURFACE SCIENCE, 2017, 418 : 414 - 417
  • [6] Effect of antimony dopants on the sorption properties of SnO2
    Vinokurova, MV
    Vinokurov, AA
    Derlyukova, LE
    RUSSIAN CHEMICAL BULLETIN, 2003, 52 (07) : 1492 - 1495
  • [7] Effect of antimony dopants on the sorption properties of SnO2
    M. V. Vinokurova
    A. A. Vinokurov
    L. E. Derlyukova
    Russian Chemical Bulletin, 2003, 52 : 1492 - 1495
  • [8] EFFECT OF DOPANTS ON THE ANODIC BEHAVIOR OF SNO2 ELECTRODES
    CHERTYKOVTSEVA, TA
    SHUB, DM
    VESELOVSKII, VI
    SOVIET ELECTROCHEMISTRY, 1978, 14 (08): : 1095 - 1097
  • [9] THERMOELECTRIC EFFECT OF SNO2-IN DOPED SNO2 THIN-FILM JUNCTION
    KAWAMATA, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1982, 21 (08): : 1243 - 1244
  • [10] Effect of the magnetic mirror field on the deposition of SnO2 thin film
    Liu, Hong-Xiang
    Wei, He-Lin
    Liu, Yan-Hong
    Liu, Zu-Li
    Gongneng Cailiao/Journal of Functional Materials, 2001, 32 (04): : 362 - 364
12345