Dielectric activity and ferroelectricity in piezoelectric semiconductor Li-doped ZnO

被引：170

作者：

Onodera, A ^{[1
]}

Tamaki, N ^{[1
]}

Kawamura, Y ^{[1
]}

Sawada, T ^{[1
]}

Yamashita, H ^{[1
]}

机构：

[1] HOKKAI GAUEN UNIV, FAC ENGN, DEPT ELECT & INFORMAT ENGN, SAPPORO, HOKKAIDO 064, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 9B期

关键词：

zinc oxide; piezoelectric; ferroelectric; dielectric anomaly; specific heat; ferroelectric phase transition; II-VI semiconductor;

D O I：

10.1143/JJAP.35.5160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependences of dielectric constants, specific heat and D-E hysteresis loops of Li-doped zinc oxide ceramics were investigated. A new dielectric anomaly was found at 330 K in Zn1-xLixO with x=0.17. A cusp-like anomaly was also found in specific heat. A ferroelectric D-E hysteresis loop was successfully observed for the first time. These observations suggest that replacement of host Zn ions by small Li ions induces a ferroelectric phase in the wurtzite-type ZnO piezoelectric semiconductor. This material is a candidate for ferroelectric thin films in integrated ferroelectric devices.

引用

页码：5160 / 5162

页数：3

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