Dependence on Al concentration of the optical phonons of AlxGa1-xN films

被引：11
|
作者：
Liu, MS [1 ]
Tong, YZ
Bursill, LA
Prawer, S
Nugent, KW
Zhang, GY
机构：
[1] Univ Melbourne, Sch Phys, Parkville, Vic 3052, Australia
[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 10期
基金：
澳大利亚研究理事会;
关键词：
D O I：
10.1016/S0038-1098(98)00422-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The MicroRaman scattering properties of AlxGa1-xN (x = 0, 0.07, 0.15) are presented. The observed modes followed the wurtzite GaN and AlN selection rules. For increasing x, the optical phonon frequencies shift linearly towards higher frequencies and broaden. The x-dependence of these modes corresponds to one-mode behavior of ternary alloys. The mechanism of Al concentration effect on the optical phonons in AlxGa1-xN films is discussed in the virtual crystal approximation. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：765 / 768
页数：4
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