Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

被引：19

作者：

Liao, Bo-Huei ^{[1
]}

Kuo, Chien-Cheng ^{[1
]}

Chen, Pin-Jen ^{[1
]}

Lee, Cheng-Chung ^{[1
]}

机构：

[1] Natl Cent Univ, Thin Film Technol Ctr, Dept Opt & Photon, Chungli 320, Taiwan

来源：

APPLIED OPTICS | 2011年 / 50卷 / 09期

关键词：

THIN-FILMS; OPTICAL-PROPERTIES; SB;

D O I：

10.1364/AO.50.00C106

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O-2 gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5 x 10(-3) in the range from 400 to 800 nm when the CF4/O-2 ratio was 0.375. The resistivity of fluorine-doped SnO2 films (1.63 x 10(-3) Omega cm) deposited at 300 degrees C was 27.9 times smaller than that of undoped SnO2 (4.55 x 10(-2) Omega cm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68 x 10(-4) Omega cm, which increased by less than 39% at a 450 degrees C annealing temperature for 1 h in air. (C) 2010 Optical Society of America

引用

页码：C106 / C110

页数：5

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