Conductivity of Semiconductor Diodes with Simultaneously Applied Direct and Alternating Biases

被引：6

作者：

Aliev, K. M. ^{[1
]}

Kamilov, I. K. ^{[1
]}

Ibragimov, Kh. O. ^{[1
]}

Abakarova, N. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Amirkhanov Inst Phys, Dagestan Sci Ctr, Makhachkala 367003, Dagestan, Russia

来源：

TECHNICAL PHYSICS | 2011年 / 56卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

CURRENT-VOLTAGE CHARACTERISTICS; STOCHASTIC RESONANCE; NEGATIVE-RESISTANCE; APPEARANCE;

D O I：

10.1134/S1063784211020022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a high-amplitude high-frequency signal on the static current-voltage characteristics of commercial semiconductor p-n junction diodes is studied experimentally. S-shaped regions are observed in the direct branches of the current-voltage characteristics over a wide frequency range, and a bell-shaped segment is seen in the reverse branches. The value and position of the latter on the voltage axis considerably depend on the alternating signal frequency.

引用

页码：298 / 300

页数：3

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