Design of an Ultra-low Pressure Sensor Based on The Growth of Graphene on Silicon Dioxide Surface

被引：0

作者：

Tran, Quochung ^{[1
]}

Gao, Chengchen ^{[1
]}

Hao, Yilong ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2017年

关键词：

graphene diaphragm; capacitive pressure sensor; ultra-low pressure; MEMBRANES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the theoretical analysis and calculation results for characterization of a graphene diaphragm applied for capacitive ultra-low pressure sensor structure, where a few layers of graphene diaphragm with radius of 8 mu m and total thickness of 2 nm, the graphene diaphragm is suspended over a circular cavity. In this paper, the graphene film was fabricated by an atmospheric-pressure chemical vapor deposition approach to directly form large-area uniform graphene film on silicon dioxide layer. Calculation results show that this capacitive pressure sensor is able to provide 164aF/Pa pressure sensitivity in an ultralow pressure range from 1Pa to 5Pa.

引用

页码：526 / 529

页数：4

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