Low-Pressure Plasma After-Treatment of Pollutants Emitted During Semiconductor Manufacturing

被引：4

作者：

Hur, Min ^{[1
]}

Lee, Jae Ok ^{[1
]}

Kang, Woo Seok ^{[1
]}

Song, Young-Hoon ^{[1
]}

机构：

[1] Korea Inst Machinery & Mat, Plasma Engn Lab, Taejon 305343, South Korea

来源：

PLASMA PROCESSES AND POLYMERS | 2015年 / 12卷 / 06期

关键词：

abatement; after-treatment; low-pressure plasma; pollutant; semiconductor manufacturing process; INDUCTIVELY-COUPLED PLASMA; ABATEMENT; PHASE; DEPOSITION; REACTOR;

D O I：

10.1002/ppap.201500046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Feasibility tests of abating and stabilizing pollutants emitted during semiconductor manufacturing are performed by using a plasma reactor placed before a vacuum pump. Abatement characteristics of N2O, CF4, CHF3, NF3, C3H6, and TEMAZ are investigated by analyzing the data obtained by using Fourier transform infrared spectroscopy and gas chromatography. The size of byproduct particles is identified by using a particle sampler. Analysis is focused on the role of reactant gases (O-2 or H2O) during abatement. Finally, the applicability of low-pressure plasma after-treatment technology is discussed from the environmental and economic points of view.

引用

页码：583 / 593

页数：11

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