Characteristics Improvement of 4H-SiC using the CIBH Structure for 10KV BA-JTE Diode

被引：0
作者：
Jia, Yunpeng [1 ]
Li, Peng [1 ]
Wu, Yu [1 ]
Hui, Dongqing [1 ]
Yang, Fei [2 ]
Zha, Yiying [2 ]
机构：
[1] Beijing Univ Technol, Lab Power Semicond Devices & Ics, Beijing, Peoples R China
[2] Global Energy Interconnect Res Inst, Beijing, Peoples R China
来源：
2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年
基金：
国家高技术研究发展计划(863计划);
关键词：
Silicon Carbide; Diode; Reverse recovery; Soft switching; Switching losses; TERMINATION;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional diode. In addition, the termination of BA-JTE guarantees the breakdown voltage of the diode. Simulated results indicate that the area ratio and doping concentration of the CIBH are the most important parameters for the optimization of switching characteristics.
引用
收藏
页数：7
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