Characteristics Improvement of 4H-SiC using the CIBH Structure for 10KV BA-JTE Diode

被引：0
|
作者：
Jia, Yunpeng [1 ]
Li, Peng [1 ]
Wu, Yu [1 ]
Hui, Dongqing [1 ]
Yang, Fei [2 ]
Zha, Yiying [2 ]
机构：
[1] Beijing Univ Technol, Lab Power Semicond Devices & Ics, Beijing, Peoples R China
[2] Global Energy Interconnect Res Inst, Beijing, Peoples R China
来源：
2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年
基金：
国家高技术研究发展计划(863计划);
关键词：
Silicon Carbide; Diode; Reverse recovery; Soft switching; Switching losses; TERMINATION;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional diode. In addition, the termination of BA-JTE guarantees the breakdown voltage of the diode. Simulated results indicate that the area ratio and doping concentration of the CIBH are the most important parameters for the optimization of switching characteristics.
引用
收藏
页数：7
相关论文
共 50 条
  • [21] High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
    Nakayama, Koji
    Ogata, Shuji
    Hayashi, Toshihiko
    Hemmi, Tetsuro
    Tanaka, Atsushi
    Izumi, Toru
    Asano, Katsunori
    Okamoto, Dai
    Tanaka, Yasunori
    Mizushima, Tomonori
    Yoshikawa, Mitsuru
    Fujisawa, Hiroyuki
    Takenaka, Kensuke
    Takei, Manabu
    Yonezawa, Yoshiyuki
    Fukuda, Kenji
    Okumura, Hajime
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 841 - +
  • [22] Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics
    Raja, P. Vigneshwara
    Murty, N. V. L. Narasimha
    JOURNAL OF SEMICONDUCTORS, 2019, 40 (02)
  • [23] 3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss
    Na, Jaeyeop
    Kim, Kwansoo
    2022 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2022,
  • [24] Electrical characteristics of 4.5 kV implanted anode 4H-SiC P-I-N junction rectifiers
    Fedison, JB
    Ramungul, N
    Chow, TP
    Ghezzo, M
    Kretchmer, JW
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (03) : 130 - 132
  • [25] Comparisons of design and yield for large-area 10-kV 4H-SiC DMOSFETs
    Howell, Robert S.
    Buchoff, Steven
    Van Campen, Stephen
    McNutt, Ty R.
    Hearne, Harold
    Ezis, Andris
    Sherwin, Marc E.
    Clarke, R. Chris
    Singh, Ranbir
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1816 - 1823
  • [26] A novel 4H-SiC super junction UMOSFET with heterojunction diode for enhanced reverse recovery characteristics
    Kim, Junghun
    Kim, Kwangsoo
    2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2020,
  • [27] Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC pin Diode
    Asano, Katsunori
    Tanaka, Atsushi
    Ogata, Shuji
    Nakayama, Koji
    Miyanagi, Yoichi
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 965 - 968
  • [28] I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode
    Panchenko, P.
    Rybalka, S.
    Malakhanov, A.
    Krayushkina, E.
    Radkov, A.
    INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016, 2016, 10224
  • [29] 1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination
    Chen Sizhe
    Sheng Kuang
    Wang Jue
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (05)
  • [30] 1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination
    陈思哲
    盛况
    王珏
    Journal of Semiconductors, 2014, (05) : 36 - 39
12345