Characteristics Improvement of 4H-SiC using the CIBH Structure for 10KV BA-JTE Diode

被引：0
|
作者：
Jia, Yunpeng [1 ]
Li, Peng [1 ]
Wu, Yu [1 ]
Hui, Dongqing [1 ]
Yang, Fei [2 ]
Zha, Yiying [2 ]
机构：
[1] Beijing Univ Technol, Lab Power Semicond Devices & Ics, Beijing, Peoples R China
[2] Global Energy Interconnect Res Inst, Beijing, Peoples R China
来源：
2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年
基金：
国家高技术研究发展计划(863计划);
关键词：
Silicon Carbide; Diode; Reverse recovery; Soft switching; Switching losses; TERMINATION;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional diode. In addition, the termination of BA-JTE guarantees the breakdown voltage of the diode. Simulated results indicate that the area ratio and doping concentration of the CIBH are the most important parameters for the optimization of switching characteristics.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] Steady-state and transient characteristics of 10 kV 4H-SiC diodes
    Levinshtein, ME
    Mnatsakanov, TT
    Ivanov, PA
    Singh, R
    Palmour, JW
    Yurkov, SN
    SOLID-STATE ELECTRONICS, 2004, 48 (05) : 807 - 811
  • [2] Modelling the static on-state current voltage characteristics for a 10 kV 4H-SiC PiN diode
    Tia, Kai
    Xia, Jinghua
    Elgammal, Karim
    Schoner, Adolf
    Kaplan, Wlodek
    Karhu, Robin
    Ul-Hassan, Jawad
    Hallen, Anders
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 115 (115)
  • [3] Development of 17 kV 4H-SiC PiN diode
    Huang Runhua
    Tao Yonghong
    Wang Ling
    Chen Gang
    Bai Song
    Li Rui
    Lu Yun
    Zhao Zhifei
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (08)
  • [4] 3.3 kV 4H-SiC JBS diodes with single-zone JTE termination
    Pan, Yan
    Tian, Liang
    Wu, Hao
    Li, Yongping
    Yang, Fei
    MICROELECTRONIC ENGINEERING, 2017, 181 : 10 - 15
  • [5] 10 A, 2.4 kV power DiMOSFETs in 4H-SiC
    Ryu, SH
    Agarwal, A
    Richmond, J
    Palmour, J
    Saks, N
    Williams, J
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (06) : 321 - 323
  • [6] Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
    Yu, Cheng-Hao
    Wang, Ying
    Bao, Meng-Tian
    Li, Xing-Ji
    Yang, Jian-Qun
    Tang, Zhao-Huan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3711 - 3715
  • [7] Simulations and analysis of electrical characteristics of 4H-SiC/Pt Schottky barrier diode
    Khalid, Muhammad
    Riaz, Saira
    Naseem, Shahzad
    MATERIALS TODAY-PROCEEDINGS, 2015, 2 (10) : 5225 - 5229
  • [8] Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
    Bartolf, H.
    Sundaramoorthy, V.
    Mihaila, A.
    Berthou, M.
    Godignon, P.
    Millan, J.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 795 - +
  • [9] Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation
    Nakayama, Koji
    Tanaka, Atsushi
    Nishimura, Masahiko
    Asano, Katsunori
    Miyazawa, Tetsuya
    Ito, Masahiko
    Tsuchida, Hidekazu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 895 - 901
  • [10] Optimization of a 4H-SiC Schottky diode using TCAD software
    Choudhary, Rupal
    Mehta, Manan
    Shekhawat, Rajesh Singh
    Singh, Sumitra
    Singh, Dheerendra
    MATERIALS TODAY-PROCEEDINGS, 2021, 46 : 5889 - 5893
12345