Mechanical model of single abrasive during chemical mechanical polishing: Molecular dynamics simulation

被引:37
作者
Chen, Ruling [1 ]
Li, Shaoxian [1 ]
Wang, Zhe [1 ]
Lu, Xinchun [2 ]
机构
[1] Donghua Univ, Coll Mech Engn, Shanghai 201620, Peoples R China
[2] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
Mechanical model; Abrasive; Chemical mechanical polishing; Molecular dynamics simulation; MATERIAL REMOVAL; CONTACT; SILICON; WATER; PRESSURE; WEAR; PAD;
D O I
10.1016/j.triboint.2018.12.018
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
The loading process among the silicon substrate, silica cluster and polyurethane pad was performed by molecular dynamics simulations. The results showed that the interaction force between the cluster and pad did not change with the working pressure at low load stage due to strong fluidity of pad atoms. But at high load stage, the interaction force would increase with increase of the working pressure owing to the reduction of pad fluidity. These demonstrate that the contact status between the abrasives and pad will change from an elastic contact to plastic contact with increase of working pressure for a chemical mechanical polishing (CMP) process. Finally, a unified mechanical model for the single abrasive during CMP under different loads was established.
引用
收藏
页码:40 / 46
页数:7
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