A 69-81 GHz Power Amplifier Using 90nm CMOS Technology

被引：0

作者：

Tsai, Jeng-Han ^{[1
]}

Chang, Ruei-An ^{[1
]}

Lin, Ji-Yang ^{[1
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Appl Elect Technol, Taipei 10610, Taiwan

来源：

2014 IEEE 14TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2014年

关键词：

CMOS; power amplifier (PA); millimeter-wave (MMW); E-band; 77-GHZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (P-sat) of 12.5 +/- 0.5 dBm from 70 to 80 GHz. The maximum P-sat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 +/- 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.

引用

页码：77 / 79

页数：3

共 13 条

[1]

[Anonymous], 2010, INTERROGATING ANTIGO

[2] A 77-GHz MMIC power amplifier for automotive radar applications [J].

Chang, HY ;

Wang, H ;

Yu, M ;

Shu, YH .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2003, 13 (04) :143-145

[3] A High Gain 77 GHz Power Amplifier Operating at 0.7 V Based on 90 nm CMOS Technology [J].

Hamada, Yasuhiro ;

Tanomura, Masahiro ;

Ito, Masaharu ;

Maruhashi, Kenichi .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (05) :329-331

[4] A. wideband 77-GHz, 17.5-dBm fully integrated power amplifier in silicon [J].

Komijani, Abbas ;

Hajimiri, Ali .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (08) :1749-1756

[5]

Kuen-Jou Tsai, 2012, 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), P69, DOI 10.1109/RFIC.2012.6242234

[6]

Kun-Yin Wang, 2012, 2012 IEEE International Solid-State Circuits Conference (ISSCC), P260, DOI 10.1109/ISSCC.2012.6177001

[7]

Kuo J.-L., 2009, IEEE MICROW WIRELESS, V19

[8]

Lee J, 2009, IEEE MTT S INT MICR, P437, DOI 10.1109/MWSYM.2009.5165727

[9] A 23-dBm 60-GHz distributed active transformer in a silicon process technology [J].

Pfeiffer, Ullrich R. ;

Goren, David .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (05) :857-865

[10]

Pinel S., 2008, Solid-State Circuits Conference, P130

← 1 2 →