Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well

被引：9

作者：

Danilov, L. V. ^{[1
]}

Zegrya, G. G. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782608050126

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The basic threshold characteristics of a semiconductor IR laser based on a heterostructure with deep InAs0.84Sb0.16/AlSb quantum wells (QWs) have been studied. The threshold carrier densities and threshold current densities of radiative and Auger recombination (AR) were found. It is shown that at certain QW parameters the AR rate is strongly (by several orders of magnitude) suppressed. In this case, the emission wavelength falls within the interval 2-3.5 mu m, which corresponds to the mid-IR spectral range. The internal quantum efficiency of emission at the lasing threshold was calculated and its dependence on the QW width within the AR suppression range was demonstrated. The laser structure was optimized with respect to the number of QWs.

引用

页码：557 / 562

页数：6

共 5 条

[1]

[Anonymous], 1997, NONRADIATIVE RECOMBI

[2] Threshold characteristics of InGaAsP/InP multiple quantum well lasers [J].

Asryan, LV ;

Gun'ko, NA ;

Polkovnikov, AS ;

Zegrya, GG ;

Suris, RA ;

Lau, PK ;

Makino, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (12) :1131-1140

[3] Theoretical study of auger recombination processes in deep quantum wells [J].

Danilov, L. V. ;

Zegrya, G. G. .

SEMICONDUCTORS, 2008, 42 (05) :550-556

[4]

ZEGRYA GG, 1992, ZH EKSP TEOR FIZ+, V101, P327

[5]

ZEGRYA GG, 1997, ANTIMONIDE RELATED S

← 1 →