Negative rectification and negative differential resistance in nanoscale single-walled carbon nanotube p-n junctions

被引：9

作者：

Yu, Lili ^{[1
,2
]}

Yan, Xin ^{[1
,2
]}

Li, Hong ^{[1
,2
]}

Qin, Rui ^{[1
,2
]}

Luo, Guangfu ^{[1
,2
]}

Xu, Chengyong ^{[1
,2
]}

Zheng, Jiaxin ^{[1
,2
,3
]}

Liu, Qihang ^{[1
,2
]}

Lu, Jing ^{[1
,2
]}

Gao, Zhengxiang ^{[1
,2
]}

Wang, Xuefeng ^{[4
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China

[4] Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China

来源：

THEORETICAL CHEMISTRY ACCOUNTS | 2011年 / 130卷 / 2-3期

关键词：

Single-walled carbon nanotube; p-n junctions; Rectification; Negative differential resistance; TRANSISTORS; DEVICES;

D O I：

10.1007/s00214-011-0990-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate the transport properties of few-nm-long single-walled carbon nanotube (SWCNT) p-n junctions for the first time by using ab initio quantum transport calculations. Unlike the previously reported few-mu m-long SWCNT p-n junctions, which rectify positively, all the investigated ultrashort SWCNT p-n junctions show negative rectification effect, accompanied by negative differential resistance.

引用

页码：353 / 359

页数：7

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