Preparation and thermoelectric properties of nc-Si:(Al2O3+SiO2) composite film

被引：1

作者：

Gao, F. ^{[1
]}

Hao, P. F. ^{[1
]}

机构：

[1] Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Peoples R China

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 22期

关键词：

nc-Si:(Al2O3+SiO2) composite film; Thermal evaporation; Annealing; Thermoelectric property; Seebeck coefficient; ALUMINUM-INDUCED CRYSTALLIZATION; AMORPHOUS-SILICON; VISIBLE ELECTROLUMINESCENCE; MICROCRYSTALLINE-SILICON; SOLAR-CELLS; THIN-FILMS; TEMPERATURE; GLASS; PHOTOLUMINESCENCE; DEPOSITION;

D O I：

10.1016/j.tsf.2011.06.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A composite film of nanocrystalline Si (nc-Si) embedded in (Al2O3 + SiO2) has been prepared on a quartz substrate by thermally evaporating a 400 nm thick Al film on a quartz substrate and annealing in air at 580 degrees C for 1 h. During annealing, the Al reacts with the SiO2 of the quartz substrate and produces nc-Si, which is embedded in the (Al2O3 + SiO2) film. The average size of nc-Si is similar to 22 rim and the thickness of the nc-Si:(Al2O3 + SiO2) composite film is similar to 810 nm. It is found that the prepared film is thermoelectric with a Seebeck coefficient of -624 mu V/K at 293 K and -225 mu V/K at 413 K. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7750 / 7753

页数：4

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