Effect of air annealing on the optical electrical and structural properties of In2S3 films

The effect of the annealing temperature T (a) on the optical, electrical and structural properties of the In(2)S(3) films obtained by the spray pyrolysis method at 350 degrees C substrate temperature was studied. All the In(2)S(3) films annealed in the range from 100 to 400 degrees C are polycrystalline with (220) preferential orientation. The resistivity decreases as T (a) increases until it reaches a value of 25 Ohm-cm for T(a)=400 degrees C. The grain size also increases when T (a) increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.