Effect of air annealing on the optical electrical and structural properties of In2S3 films

被引：19
作者：
Bedir, Metin [1 ]
Oztas, Mustafa [1 ]
机构：
[1] Gaziantep Univ, Fac Engn, Dept Engn Phys, TR-27310 Gaziantep, Turkey
来源：
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES | 2008年 / 51卷 / 05期
基金：
英国科研创新办公室;
关键词：
In(2)S(3); spray pyrolysis; annealing; structural properties;
D O I：
10.1007/s11431-008-0074-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the annealing temperature T (a) on the optical, electrical and structural properties of the In(2)S(3) films obtained by the spray pyrolysis method at 350 degrees C substrate temperature was studied. All the In(2)S(3) films annealed in the range from 100 to 400 degrees C are polycrystalline with (220) preferential orientation. The resistivity decreases as T (a) increases until it reaches a value of 25 Ohm-cm for T(a)=400 degrees C. The grain size also increases when T (a) increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.
引用
收藏
页码：487 / 493
页数：7
相关论文
共 23 条
[1]   GROWTH OF IN(2)S(3) THIN-FILMS BY ATOMIC LAYER EPITAXY [J].
ASIKAINEN, T ;
RITALA, M ;
LESKELA, M .
APPLIED SURFACE SCIENCE, 1994, 82-3 :122-125
[2]   New Cd-free buffer layer deposited by PVD:: In2S3 containing Na compounds [J].
Barreau, N ;
Bernède, JC ;
Marsillac, S ;
Amory, C ;
Shafarman, WN .
THIN SOLID FILMS, 2003, 431 :326-329
[3]   EFFECT OF CU/IN RATIO ON STRUCTURE OF CULNS2 AIRLESS SPRAY THIN-LAYERS - APPLICATION, PHOTOVOLTAIC CONVERSION [J].
BELGACEM, S ;
AMLOUK, M ;
BENNACEUR, R .
REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (12) :1213-1223
[4]  
Bessergenev VG, 1996, INORG MATER+, V32, P592
[5]   Characterization of rf-sputtered indium tin oxide thin films [J].
Bhatti, MT ;
Rana, AM ;
Khan, AF .
MATERIALS CHEMISTRY AND PHYSICS, 2004, 84 (01) :126-130
[6]   Growth temperature effect on structural and morphological properties of ''Spray'' In2S3 thick films [J].
Bouguila, N ;
Bouzouita, H ;
Lacaze, E ;
Amara, AB ;
Bouchriha, H ;
Dhouib, A .
JOURNAL DE PHYSIQUE III, 1997, 7 (08) :1647-1660
[7]   PHOTOCONDUCTIVITY IN INDIUM SULFIDE POWDERS AND CRYSTALS [J].
BUBE, RH ;
MCCARROLL, WH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (04) :333-335
[8]   VAPOR GROWTH OF 3 IN2S3 MODIFICATIONS BY IODINE TRANSPORT [J].
DIEHL, R ;
NITSCHE, R .
JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) :306-310
[9]   Electrical properties of β-In2S3 thin films [J].
El Shazly, AA ;
Abd Elhady, D ;
Metwally, HS ;
Seyam, MAM .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (26) :5943-5954
[10]   REACTIVELY EVAPORATED-FILMS OF INDIUM SULFIDE [J].
GEORGE, J ;
JOSEPH, KS ;
PRADEEP, B ;
PALSON, TI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (01) :123-131
123