Phase control of optical bistability in an InGaN/GaN quantum dot nanostructure

被引：2

作者：

Jafarzadeh, Hossein ^{[1
]}

Nasehi, Rajab ^{[1
]}

Sangachin, Elnaz Ahmadi ^{[1
]}

Asadpour, Seyyed Hossein ^{[1
]}

机构：

[1] Islamic Azad Univ, Tabriz Branch, Sama Tech & Vocat Training Coll, Tabriz, Iran

来源：

MODERN PHYSICS LETTERS B | 2015年 / 29卷 / 17期

关键词：

Optical bistability; terahertz signal field; relative phase; quantum dot nanostructure; MULTISTABILITY; COHERENCE; ENSEMBLE; STORAGE; SYSTEM;

D O I：

10.1142/S0217984915500839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we propose a model for controlling the optical bistability in four-level InGaN/GaN quantum dot nanostructure which is embedded in a unidirectional ring cavity. InGaN/GaN quantum dot nanostructure is based on our recent paper [S. H. Asadpour, Z. Golsanamlou and H. R. Soleimani, Physica E 54 (2013) 45]. It is found that intensity threshold of optical bistability can be manipulated by signal intensity of applied fields. Moreover, we find that phase variation of terahertz signal field can also affect the behaviors of optical bistability and hysteresis loop.

引用

页数：8

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