Interdiffusion coefficients and conductivity in gold/nickel bilayer thin films on silicon(111) wafers

被引:4
作者
Abdul-Lettif, AM [1 ]
Rammo, NN [1 ]
Makadsi, MN [1 ]
机构
[1] Univ Baghdad, Coll Sci, Baghdad, Iraq
关键词
interdiffusion; gold; nickel; thin films;
D O I
10.1002/sia.1020
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Interdiffusion in the gold/nickel bilayer thin films deposited on silicon(111) wafers in the temperature range 200-500 degreesC has been studied using x-ray photoelectron spectroscopy (XPS), sheet resistance measurements (SRM) and x-ray diffraction. Two independent methods have been used to determine the diffusion coefficients: the accumulation concentration of nickel on the gold surface using XPS; and the variation of sheet resistance as a function of annealing time and temperature. The diffusion coefficients deduced from XPS and SRM are (4.0 x 10(-11) cm(2) s(-1)) exp(-0.79 eV/kT) and (4.8 x 10-11 cm(2) s(-1)) exp(-0.83 eV/kT), respectively. It is shown that diffusion of nickel through the gold layer causes a considerable loss in conductivity of the bilayer thin films. Copyright (C) 2001 John Wiley & Sons, Ltd.
引用
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页码:117 / 120
页数:4
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