= A centrosymmetric Dy2 compound derived from acylhydrazone Schiffbase ligand exhibiting zero-field single-molecule magnet behavior

被引:9
作者
Du, Jiyuan [1 ]
Duan, Bin [2 ]
Gao, Lei [3 ]
Jiang, Zhijie [4 ]
Sun, Lin [1 ]
Ma, Pengtao [1 ]
Li, Mingxue [1 ]
机构
[1] Henan Univ, Sch Chem, Chem Engn, Henan Key Lab Polyoxometalate Chem, Kaifeng 475004, Henan, Peoples R China
[2] Ningxia Univ, Sch Chem & Chem Engn, Yinchuan 750021, Ningxia, Peoples R China
[3] China Qiyuan Engn Corp, Xian 71000, Shanxi, Peoples R China
[4] Shaanxi Xueqian Normal Univ, Xian 710100, Shanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Binuclear Dy-III compound; Single-molecule magnet; Biaugmented trigonal prism configuration; Wide-gap semiconductor; ANISOTROPY BARRIER; COMPLEXES; RELAXATION; MAGNETIZATION; SYMMETRY; DYNAMICS; LN(III);
D O I
10.1016/j.molstruc.2021.132223
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Based on acylhydrazone Schiffbase ligand (2,3'-Hpcad, N-3-(2-pyridoyl)-3-pyridinecarboxamidrazone), a binuclear Dy-III compound, [Dy-2(2,3'-pcad) 2(C6H5COO)(4)(H2O)(2)] (1), has been successfully prepared by the hydrothermal synthesis method, and fully characterized by single-crystal X-ray diffraction, elemental analysis, Raman spectra, diffuse reflectance spectroscopy and magnetic property measurement system. Compond 1 exhibits a centrosymmetric binuclear structure bridged by benzoate groups and each eightcoordinated DyIII ion is located in a slightly distorted biaugmented trigonal prism configuration (C-2v-BTPR). In addition, alternating-current magnetic susceptibility measurements illustrate that 1 exhibits zero-field single-molecule magnet behavior with the higher effective energy barrier (U-eff) value of 114.0 K compared to other Dy-2 compounds with C-2v-BTPR configuration. In addition, this study reveals configuration of each Dy-III ion and intra-molecular magnetic coupling of two Dy-III ions may synergistically effect Dy-2-SMMs properties. Furthermore, the band gap energy of 1 is found to be 2.65 eV, which proves 1 could be used as the wide-gap semiconductor. (C) 2021 Elsevier B.V. All rights reserved.
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页数:8
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