Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

被引：15

作者：

Bergmann, Benedikt ^{[1
]}

Pospisil, Stanislav ^{[1
]}

Caicedo, Ivan ^{[1
]}

Kierstead, James ^{[2
]}

Takai, Helio ^{[2
]}

Frojdh, Erik ^{[3
]}

机构：

[1] Czech Tech Univ, Inst Expt & Appl Phys, Prague 12800 2, Albertov, Czech Republic

[2] Brookhaven Natl Lab, Upton, NY 11973 USA

[3] CERN, CH-1211 Geneva 23, Switzerland

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2016年 / 63卷 / 04期

关键词：

Neutron radiation effects; nonionizing energy loss; semiconductor detectors; DISPLACEMENT; RADIATION; DAMAGE; TIMEPIX; PHYSICS; SOLIDS; IONS;

D O I：

10.1109/TNS.2016.2574961

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study we present the ionizing energy depositions in a 300 mu m thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. The data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.

引用

页码：2372 / 2378

页数：7

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