Multiferroic properties of sputtered BiFeO3 thin films

被引：107
作者：
Li, Yibin [1 ,2 ]
Sritharan, Thirumany [1 ]
Zhang, Sam [3 ]
He, Xiaodong [2 ]
Liu, Yang [4 ]
Chen, Tupei [4 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Harbin Inst Technol, Sch Astronaut, Ctr Composite Mat, Harbin 150001, Peoples R China
[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期
关键词：
D O I：
10.1063/1.2901871
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A cosputtering method was used to deposit BiFeO3 thin films on Pt/Ti/SiO2/Si substrates. It was confirmed as a polycrystalline film with a tetragonal crystal structure in the annealed state. Both Fe2+ and Fe3+ ions were found to coexist in the film. The leakage current density is as low as 10(-3) A/cm(2) at 120 kV/cm. This sputtered film shows multiferroic properties exhibiting a saturated ferroelectric loop with a large remnant polarization of 37 mu C/cm(2) and a saturated ferromagnetic loop with saturation magnetization of 21 emu/cm(3) at room temperature.
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