High power and single mode DH InGaAsSb(Gd)/InAsSbP (λ≈3.3 μm) diode lasers

被引：0
|
作者：
Matveev, BA [1 ]
Aydaraliev, M [1 ]
Zotova, NV [1 ]
Karandashov, SA [1 ]
Remennyi, MA [1 ]
Stus, NM [1 ]
Talalakin, GN [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, Russian Acad Sci, St Petersburg 194021, Russia
来源：
LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V | 2001年 / 4278卷
关键词：
mid-infrared lasers; power lasers; tunable lasers; single mode lasers;
D O I：
10.1117/12.426833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multimode pulse (P=1.56 W, I=9.5 A) and CW (P=160 mW, I=1 A) operation is reported at 77 K for the broad (w=200 mum) contact InGaAsSb(Gd)/InAsSbP diode lasers with lambda =3.0 divided by3.3 mum Narrow stripe lasers (w=20 etam) exhibited singlemode CW power as high as 18.7 and 9.3 mW at 77 and 100 K correspondingly. Single mode operation have been achieved in 70 divided by 140 mum long lasers with linewidth as narrow as 5 MHz, tuning rate as high as 210 cm(-1)/A and subsidiary mode suppression up to 650:1. Methane detection at 3028.75 cm(-1) by wavelength modulation spectroscopy has been demonstrated.
引用
收藏
页码：13 / 18
页数：4
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