Adsorption-induced strain of a nanoscale silicon honeycomb

被引:39
作者
Grosman, A. [1 ]
Puibasset, J. [2 ]
Rolley, E. [3 ,4 ,5 ]
机构
[1] Univ Paris 06, CNRS, Inst NanoSci Paris, F-75005 Paris, France
[2] Univ Orleans, CNRS UMR7374, Interfaces Confinement Mat & Nanostruct, F-45071 Orleans 02, France
[3] Associe CNRS, Lab Phys Stat ENS, F-75005 Paris, France
[4] Univ Paris 06, F-75005 Paris, France
[5] Univ Paris 07, F-75005 Paris, France
关键词
POROUS SILICON; INDUCED DEFORMATION; YOUNGS MODULUS; PARAMETER; PRESSURE; PORE;
D O I
10.1209/0295-5075/109/56002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on systematic measurements of both adsorption and anisotropic mechanical deformations of mesoporous silicon, using heptane at room temperature. Porous Si obtained from highly doped (100) Si can be thought of as a nanoscale random honeycomb with pores parallel to the [001] axis. We show that strains is an element of(parallel to) and is an element of(perpendicular to) measured along and transversely to the pore axis exhibit a hysteretic behavior as a function of the fluid pressure, which is due to the hysteresis in fluid adsorption. The pressure dependence of the strains together with the independent measurement of the transverse stress, allows us to determine the biaxial transverse modulus and to estimate the longitudinal Young's modulus of porous Si. We argue that the value of these constants implies that Young's modulus of the 6 nm thick walls of the honeycomb is about 5 times smaller than that of bulk silicon, striking evidence of finite-size effects. Copyright (C) EPLA, 2015
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页数:6
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