Trap behaviors in AlGaN/GaN based polarization-doped field effect transistors by frequency-dependent conductance-voltage characterizations

被引：2

作者：

Fang, Yulong ^{[1
,2
]}

Feng, Zhihong ^{[2
]}

Li, Chengming ^{[1
]}

Yin, Jiayun ^{[2
]}

Zhang, Zhirong ^{[2
]}

Dun, Shaobo ^{[2
]}

Lv, Yuanjie ^{[2
]}

Guo, Jianchao ^{[1
]}

Cai, Shujun ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 82卷

关键词：

AlGaN/GaN; Graded heterojunctions; Trap; Conductance-voltage; HETEROSTRUCTURE; STATES;

D O I：

10.1016/j.spmi.2015.02.009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

AlGaN/GaN polarization-doped field-effect transistors (PolFETs) were fabricated on the graded AlGaN/GaN heterojunctions grown by metal organic chemical vapor deposition, and the trap behaviors were first systemically evaluated by frequency-dependent conductance-voltage characterizations. It was found that there was no obvious effective traps accumulation in the graded AlGaN/GaN heterojunctions of the PolFETs due to the absence of abrupt heterostructure as in the traditional HFETs. The exactly exponential dependence of the trap state time constants on the bias voltage in PolFETs was observed, which was a typical characteristic for interface traps, indicating a multi-heterointerface feature of the PolFETs. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：201 / 206

页数：6

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