Simulation of tunneling field-effect transistors with extended source structures

被引：11
|
作者：
Yang, Yue [1 ]
Guo, Pengfei [1 ]
Han, Genquan [1 ]
Low, Kain Lu [1 ]
Zhan, Chunlei [1 ]
Yeo, Yee-Chia [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 11期
关键词：
PERFORMANCE; DESIGN; MOSFET;
D O I：
10.1063/1.4729068
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we perform a study of novel source structures in double-gate (DG) Tunneling Field-Effect Transistors (TFETs) by two-dimensional numerical simulation of source structures in double gate tunneling field effect. Extended source structures are employed in both pure Ge TFETs and Ge-source Si-body TFETs, and on-state current enhancement is observed in simulation results. Compared with conventional p(+)-p(-)-n(+) TFETs, the p(+) region in extended source TFETs extends underneath the gates. When large gate bias is applied, high electric field xi, which distributes along p(+)-p(-) junction edge extends into the middle of the channel. More tunneling paths with short lengths are available in the on-state, effectively boosting the drive current of TFET. In addition, the extent of performance enhancement depends on the geometry of the extended source. By incorporating heterojunction, TFET drive current can be increased further, which is up to 0.8 mA/mu m at V-GS = V-DS = 0.7 V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729068]
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页数：8
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