Non-polar InxGa1-xN/GaN quantum dots: impact of dot size and shape anisotropies on excitonic and biexcitonic properties

In this work, we present a theoretical analysis of the built-in potential, the excitonic and biexcitonic properties of non-polar InGaN/GaN quantum dots by means of self-consistent Hartree calculations using k . p theory. Special attention is paid to the impact of dot size and shape anisotropies on the results. Our calculations reveal that even though non-polar InGaN/GaN quantum dots exhibit strongly reduced built-in fields when compared to c-plane dots, the excitonic and biexcitonic properties are significantly affected by these residual fields. Furthermore, changes in the built-in field when the geometrical dot features are modified, result in an unusual variation of the exciton binding energy. All these findings highlight that the dot geometry significantly affects electronic and optical properties of non-polar InGaN/GaN systems. This is further supported by comparing our theoretical data with experimental literature results. Here, we analyze also trends in exciton and biexciton binding energies and discuss the potential use of non-polar InGaN/GaN dots for entangled photon emission via the time reordering scheme.