Defect Nucleation During Nanoindentation: An Atomistic Analysis

被引：10

作者：

Leger, R. W. ^{[1
]}

Shen, Y-L. ^{[1
]}

Khraishi, T. A. ^{[1
]}

机构：

[1] Univ New Mexico, Dept Mech Engn, Albuquerque, NM 87131 USA

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2004年 / 1卷 / 03期

关键词：

Atomistic Simulation; Nanoindentation; Dislocation; Molecular Statics; Incipient Plasticity; Defect Nucleation;

D O I：

10.1166/jctn.2004.022

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An atomistic analysis of nanoindentation using molecular statics is undertaken. The simulation is within the two-dimensional framework, featuring a model crystal having a close-packed lattice structure. Attention is devoted to characterizing the nucleation of dislocations in response to indentation loading. The location of subsurface nucleation is found to coincide with the maximum resolved shear strain along the slip systems. A unique critical strain value appears to exist for initiating nanoscale plasticity in a perfect crystal under indentation.

引用

页码：261 / 264

页数：4

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