Sintering silicon nitride ceramics in air

被引:15
|
作者
Plucknett, KP
Lin, HT
机构
[1] Oak Ridge Natl Lab, Ceram Sci & Technol Grp, Oak Ridge, TN 37831 USA
[2] Dalhousie Univ, Dept Proc Engn & Appl Sci, Halifax, NS B3J 1Z1, Canada
关键词
D O I
10.1111/j.1551-2916.2005.00631.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon nitride (Si3N4) ceramics, prepared with Y2O3 and Al2O3 sintering additives, have been densified in air at temperatures of up to 1750 degrees C using a conventional MoSi2 element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y2O3 and 3 wt% Al2O3. Densification is accompanied by a small weight gain (typically < 1-2 wt%), because of limited passive oxidation of the sample. Complete alpha- to beta-Si3N4 transformation can be achieved at temperatures above 1650 degrees C, although a low volume fraction of Si2N2O is also observed to form below 1750 degrees C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with beta-Y2Si2O7 being noted in the majority of samples. The microstructures of the sintered materials exhibited typical beta-Si3N4 elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si3N4-based ceramics.
引用
收藏
页码:3538 / 3541
页数:4
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