Thermal Analysis of High Power Light Emitting Diodes Package

被引：0

作者：

Han, Yuanyuan ^{[1
]}

Guo, Hong ^{[1
]}

Zhang, Ximin ^{[1
]}

Yin, Fazhang ^{[1
]}

Chu, Ke ^{[1
]}

Ouyang, Yao ^{[1
]}

机构：

[1] Gen Res Inst Nonferrous Met, Beijing, Peoples R China

来源：

FUNCTIONAL AND ELECTRONIC MATERIALS | 2011年 / 687卷

关键词：

high power LEDs package; finite element analysis; junction temperature; heatsink structure; LEDS;

D O I：

10.4028/www.scientific.net/MSF.687.215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With increasing of the input power of the chips in light emitting diode (LED), the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8 degrees C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

引用

页码：215 / 221

页数：7

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