Analysis of electrical characteristics of La2O3 thin films annealed in vacuum and others

被引：2

作者：

Kim, Y ^{[1
]}

Kuriyama, A ^{[1
]}

Ueda, I ^{[1
]}

Ohmi, S ^{[1
]}

Tsutsui, K ^{[1
]}

Iwai, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Tokyo 152, Japan

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

10.1109/ESSDERC.2003.1256940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lantham oxide (La2O3) was deposited by MBE on n-Si(100), and annealed at 400degreesC in vacuum in-situ for 90 min. Metal electrodes were Ag or Al. From the electric field and temperature dependence of the current of the gate oxide, it has shown that the main conduction mechanism is the P-F (Poole-Frenkel) conduction and contributed by the SCLC (Space-Charge-Limited Current), depending on the bias condition. The dielectric constant obtained from P-F conduction equation was 10 and was consistent with the C-V result. We also realized that SCLC plays a role in the low gale voltage region of the P-F conduction, which ranges in the absolute voltage less than 0.34 V.

引用

页码：569 / 572

页数：4

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